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so-8 absolute maximum ratings symbol units v ds v gs continuous drain or source t a = 25c (v gs 4.5v) t a = 70c i dm t a = 25c t a = 70c t j , t stg c i s i sm thermal resistance symbol typ max units r ja ??? 50 r jl ??? 20 a w a c/w parameter maximum junction-to-ambient maximum junction-to-lead junction & storage temperature range continuous source current (body diode) pulsed source current parameter v power dissipation drain-source voltage gate-source voltage pulsed drain current p d i d irf7807v 8.3 2.5 66 2.5 -55 to 150 1.6 66 30 20 6.6 hexfet power mosfet
top view 8 1 2 3 4 5 6 7 d d d d g s a s s v ds 30 v r ds(on) max (@v gs = 4.5v) 25 m q g (typical) 9.5 nc i d (@t a = 25c) 8.3 a features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability

! form quantity IRF7807VPBF-1 so-8 tape and reel 4000 irf7807vtrpbf-1 package type standard pack orderable part number base part number

! notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board typ = measured - q oss typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs = 5.0v, i f = 7.0a.

* device are 100% tested to these parameters. electrical characteristics parameter symbol min typ max units drain-source breakdown voltage bv dss 30 ??? ??? v static drain-source on-resistance r ds(on) ??? 17 25 m gate threshold voltage v gs(th) 1.0 ??? 3.0 v ??? ??? 100 ??? ??? 20 ??? ??? 100 gate-source leakage current* i gss ??? ??? 100 na total gate charge* q g ??? 9.5 14 pre-vth gate-source charge q gs1 ??? 2.3 ??? post-vth gate-source charge q gs2 ??? 1.0 ??? gate-to-drain charge q gd ??? 2.4 ??? switch charge (q gs2 + q gd )q sw ??? 3.4 5.2 output charge* q oss ??? 12 16.8 v ds = 16v, v gs = 0 gate resistance r g 0.9 ??? 2.8 turn-on delay time t d(on) ??? 6.3 ??? rise time t r ??? 1.2 ??? turn-off delay time t d(off) ??? 11 ??? fall time t f ??? 2.2 ??? source-drain ratings and characteristics parameter symbol min typ max units diode forward voltage* v sd ??? ??? 1.2 v reverse recovery charge (with parallel schottsky) 64 ??? i s = 7.0a ,v gs = 0v ??? q rr conditions v gs = 0v, i d = 250 a v gs = 4.5v, i d = 7.0a v ds = v gs , i d = 250 a v ds = 30v, v gs = 0 v gs = 20v i dss drain-source leakage current v ds = 16v v ds = 24v, v gs = 0 v ds = 24v, v gs = 0, t j = 100c v gs = 5v, i d = 7.0a a nc ns conditions v gs = 5v, r g = 2 v dd = 16v i d = 7a resistive load ??? nc reverse recovery charge di/dt = 700a/ s , (with 10bq040) v ds = 16v, v gs = 0v, i s = 7.0a di/dt = 700a/ s v ds = 16v, v gs = 0v, i s = 7.0a q rr(s) ??? 41
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control fet special attention has been given to the power losses in the switching elements of the circuit - q1 and q2. power losses in the high side switch q1, also called the control fet, are impacted by the r ds(on) of the mosfet, but these conduction losses are only about one half of the total losses. power losses in the control switch q1 are given by; p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) ( ) + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? this simplified loss equation includes the terms q gs2 and q oss which are new to power mosfet data sheets. q gs2 is a sub element of traditional gate-source charge that is included in all mosfet data sheets. the importance of splitting this gate-source charge into two sub elements, q gs1 and q gs2 , can be seen from fig 1. q gs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to i dmax (t2) at which time the drain volt- age begins to change. minimizing q gs2 is a critical fac- tor in reducing switching losses in q1. q oss is the charge that must be supplied to the out- put capacitance of the mosfet during every switch- ing cycle. figure 2 shows how q oss is formed by the parallel combination of the voltage dependant (non- linear) capacitance?s c ds and c dg when multiplied by the power supply input buss voltage. figure 1: typical mosfet switching waveform synchronous fet the power loss equation for q2 is approximated by; p loss = + + = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. power mosfet selection for dc/dc converters 4 1 2 drain current gate voltage drain voltage t3 t2 t1 v gth q gs1 q gs2 q gd t0

! typical mobile pc application the performance of these new devices has been tested in circuit and correlates well with performance predic- tions generated by the system models. an advantage of this new technology platform is that the mosfets it produces are suitable for both control fet and synchro- nous fet applications. this has been demonstrated with the 3.3v and 5v converters. (fig 3 and fig 4). in these applications the same mosfet irf7807v was used for both the control fet (q1) and the synchronous fet (q2). this provides a highly effective cost/performance solution. figure 3 figure 4 figure 2: q oss characteristic for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. spice model for irf7807v can be downloaded in machine readable format at www.irf.com.

83 84 85 86 87 88 89 90 91 92 93 12345 load current (a) efficiency (%) vin=24v vin=14v vin=10v 86 87 88 89 90 91 92 93 94 95 12345 load current (a) efficiency (%) vin=24v vin=14v vin=10v
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fig 5. normalized on-resistance vs. temperature fig 6. typical gate charge vs. gate-to-source voltage fig 7. on-resistance vs. gate voltage fig 8. typical source-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 7.0a 0 2 4 6 8 10 12 0 1 2 3 4 5 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 7.0a v = 16v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.0a

! figure 9. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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so-8 package outline dimensions are shown in milimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont roll ing dime ns ion: mil lime te r 3. di me ns i ons ar e s h own i n mi l l i me t e r s [i nch e s ] . 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he le ngt h of l e ad f or s ol dering t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx int ernat ional rect ifier logo f 7101 y = l as t digit of t he ye ar part number lot code ww = we e k e xample: t his is an irf7101 (mos fe t ) p = de s i gnat e s l e ad-f r e e product (optional) a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 date comments ? corrected part number from" IRF7807VPBF-1" to "irf7807vtrpbf-1" -all pages ? removed the "IRF7807VPBF-1" bulk part number from ordering information on page1 revision history 10/16/2014

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